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r07ds0442ej0100 rev.1.00 page 1 of 23 sep 07, 2011 preliminary data sheet pd166021t1f mos integrated circuit 1. overview 1.1 description the pd166021t1f is a single n-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions. 1.2 features ? built-in charge pump ? low on-state resistance ? short circuit protection - shutdown by over current detection and over load detection ? over temperature protection - shutdown by over temperature detection and keep off-state ? built-in diagnostic function - proportional load current sensing - defined fault signal in case of abnormal load condition ? under voltage lock out ? reverse battery protection by self turn on of n-ch mosfet ? small multi-chip package: jedec 5-pin to -252 (msl: 3, profile acc. j-std-20c) ? aec qualified 1.3 applications ? light bulb (to 65 w) switching ? switching of all types of 14 v dc grounded loads, such as led, inductor, resistor and capacitor ? replacement for fuse and relay 2. ordering information part no. lead plating packing package pd166021t1f-e1-ay ? 1 sn tape 2500 p/reel 5-pin to-252 (mp-3zk) note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) r07ds0442ej0100 rev.1.00 sep 07, 2011
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 2 of 23 sep 07, 2011 3. specification 3.1 block diagram current sense control logic power supply voltage sense output voltage clamp vcc out is internal power supply r is load 4 1 & 5 3 & tab dynamic clamp v out v on v is i is i l i cc esd protection in i in 2 v cc - v in v in v cc charge pump current detector output voltage sense temperature sensor fault signal output esd protection 3.2 pin configuration 12345 ta b pin function terminal name pin function recommended connections out output to load pin 1 and pin 5 must be externally shorted in activates the output, if it shorted to ground if reverse battery protection feature is used, refer to 3.6.3 power dissipation under reverse battery condition . vcc supply voltage; tab and pin 3 are internally shorted connected to battery voltage with small 100 nf capacitor in parallel is sense output, diagnostic feedback if current sense and diagnostic feature are not used, connected to gnd via resistor pin no. terminal name 1 out 2 in 3/tab vcc 4 is 5 out
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 3 of 23 sep 07, 2011 3.3 absolute maximum ratings t a = 25c, unless otherwise specified parameter symbol rating unit test conditions v cc voltage v cc1 28 v v cc voltage under load dump condition v cc2 42 v r i = 1 , r l = 1.5 , r is = 1 k , t d = 400 ms v cc voltage at reverse battery condition ? v cc ? 16 v r l = 2.2 , 1 min. load current (short circuit current) i l(sc) self limited a power dissipation (dc) p d 1.2 w t a = 85 c, device on 50 mm x 50 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 m copper area v cc ? 28 dc voltage of in pin v in v cc + 14 v at reverse battery condition, t < 1 min. v cc ? 28 dc voltage of is pin v is v cc + 14 v at reverse battery condition, t < 1 min. inductive load switch-off energy dissipation single pulse e as1 50 mj v cc = 12 v, i l = 10 a, t ch,start 150 c refer to 3.6.8 inductive load switch off energy dissipation for a single pulse maximum allowable energy dissipation at shutdown operation e as2 105 mj v cc = 18 v, t ch,star 150 c, l supply = 5 h, l short = 15 h refer to 3.6.9 maximum allowable switch off energy (single pulse) channel temperature t ch ? 40 to +150 c dynamic temperature increase while switching t ch 60 c storage temperature t stg ? 55 to +150 c 2000 v hbm aec-q100-002 std. r = 1.5 k , c = 100 pf esd susceptibility v esd 400 v mm aec-q100-003 std. r = 0 , c = 200 pf 3.4 thermal characteristics parameter symbol min. typ. max. unit test conditions r th(ch-a) 45 c/w device on 50 mm x 50 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 m copper area thermal characteristics r th(ch-c) 3.17 c/w
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 4 of 23 sep 07, 2011 3.5 electrical characteristics operation function t ch = 25c, v cc = 12 v, unless otherwise specified parameter symbol min. typ. max. unit test conditions required current capability of input switch i ih 1.0 2.2 ma input current for turn-off i il 50 a t ch = ? 40 to 150 c 2.5 5.0 a r l = 2.2 , i in = 0 a, t ch = 25 c standby current i cc(off) 2.5 15.0 a r l = 2.2 , i in = 0 a, t ch = ? 40 to 150 c 8 10 i l = 7.5 a, t ch = 25 c on state resistance r on 14 18 m i l = 7.5 a, t ch = 150 c output voltage drop limitation at small load current v on(nl) 30 65 mv t ch = ? 40 to 150 c turn on time t on 120 360 s turn off time t off 250 500 s r l = 2.2 , t ch = ? 40 to 150 c, refer to 3.6.6 measurement condition slew rate on *1 dv/dton 0.2 0.8 v/ s 25 to 50% v out , r l = 2.2 , t ch = ? 40 to 150 c, refer to 3.6.6 measurement condition slew rate off *1 ? dv/dtoff 0.2 0.6 v/ s 50 to 25% v out , r l = 2.2 , t ch = ? 40 to 150 c, refer to 3.6.6 measurement condition note : ? 1. not tested, specified by design
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 5 of 23 sep 07, 2011 protection function t ch = 25c, v cc = 12 v, unless otherwise specified parameter symbol min. typ. max. unit test conditions 9.5 13 m t ch = 25 c on-state resistance at reverse battery condition *1 r on(rev) 16 22 m t ch = 150 c v cc = ? 12 v, i l = ? 7.5 a, r is = 1 k 50 120 t ch = ? 40 c 50 t ch = 25 c i l6,3(sc) *1 20 45 t ch = 150 c v cc ? v in = 6 v, v on = 3 v 35 110 t ch = ? 40 c 35 t ch = 25 c i l6,6(sc) *1 10 35 t ch = 150 c v cc ? v in = 6 v, v on = 6 v 110 180 t ch = ? 40 c 76 105 t ch = 25 c i l12,3(sc) 50 95 t ch = 150 c v cc ? v in = 12 v, v on = 3 v 90 160 t ch = ? 40 c 85 t ch = 25 c i l12,6(sc) *1 40 80 t ch = 150 c v cc ? v in = 12 v, v on = 6 v 55 120 t ch = ? 40 c 50 t ch = 25 c i l12,12(sc) *1 10 45 t ch = 150 c v cc ? v in = 12 v, v on = 12 v 130 200 t ch = ? 40 c 125 t ch = 25 c i l18,3(sc) *1 60 110 t ch = 150 c v cc ? v in = 18 v, v on = 3 v 110 170 t ch = ? 40 c 110 t ch = 25 c i l18,6(sc) *1 50 110 t ch = 150 c v cc ? v in = 18 v, v on = 6 v 75 120 t ch = ? 40 c 70 t ch = 25 c i l18,12(sc) *1 30 65 t ch = 150 c v cc ? v in = 18 v, v on = 12 v 50 90 t ch = ? 40 c 50 t ch = 25 c short circuit detection current i l18,18(sc) *1 5 45 a t ch = 150 c v cc ? v in = 18 v, v on = 18 v turn-on check delay after input current positive slope *1 t d(oc) 0.9 2.1 3.8 ms t ch = -40 to 150 c remaining turn-on check delay after turn-on time *1 t d(oc) ? t on 0.65 1.6 ms r l = 2.2 , t ch = ? 40 to 150 c over load detection voltage v on(ovl) 0.65 1 1.45 v t ch = ? 40 to 150 c 5.5 v t ch = ? 40 c 3.2 4.0 5.35 v t ch = 25 c under voltage shutdown v cin(uv) 2.7 v t ch = 150 c 6.3 v t ch = ? 40 c 3.6 4.5 6.2 v t ch = 25 c under voltage restart of charge pump v cin(cpr) 3.2 v t ch = 150 c output clamp voltage (inductive load switch off) v on(cl) 30 34 40 v i l = 40 ma, t ch = ? 40 to 150 c thermal shutdown temperature *1 t th 150 175 c note : ? 1. not tested, specified by design
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 6 of 23 sep 07, 2011 diagnosis function t ch = 25c, v cc = 12 v, unless otherwise specified parameter symbol min. typ. max. unit test conditions k ilis = i l /i is , i is < i is,lim 8300 9200 11000 t ch = ? 40 c 8300 9200 10600 t ch = 25 c 8400 9300 10200 t ch = 150 c i l = 30a 7500 9200 11400 t ch = ? 40 c 8000 9300 10800 t ch = 25 c 8300 9300 10400 t ch = 150 c i l = 7.5 a 7100 10200 13400 t ch = ? 40 c 7700 10000 12500 t ch = 25 c 8000 9800 12000 t ch = 150 c i l = 2.5 a 5000 12000 21000 t ch = ? 40 c 5500 11500 17000 t ch = 25 c current sense ratio k ilis 6000 11500 16000 t ch = 150 c i l = 0.5 a sense current offset current i is,offset 0.1 1 a v in = 0 v, i l = 0 a sense current under fault condition i is,fault 3.5 6.0 12.0 ma under fault conditions 8 v < v cc ? v is < 12 v, t ch = ? 40 to 150 c sense current saturation current i is,lim 3.5 7.0 12.0 ma v is < v out ? 6 v, t ch = ? 40 to 150 c fault sense signal delay after short circuit detection *1 t sdelay(fault) 2 6 s t ch = ? 40 to 150 c sense current leakage current i is(ll) 0.1 0.5 a i in = 0 a current sense settling time to i is (static) after input current positive slope *1 t son(is) 700 s t ch = ? 40 to 150 c, i in = 0 a i ih , r l = 2.2 current sense settling time during on condition *1 t sic(is) 50 100 s t ch = ? 40 to 150 c, i l = 10a 20 a note : ? 1. not tested, specified by design
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 7 of 23 sep 07, 2011 3.6 feature description 3.6.1 driving circuit the high-side output is turned on, if the input pin is shorted to ground. the input current is below i ih . the high-side output is turned off, if the input pin is open or the input current is below i il . r cc is 100 typ. esd protection diode: 46 v typ. switching a resistive load 0 0 0 t i in i l i is v cc v out 0 0 0 0 i in i l i is i is,lim v out 0 t switching lamps 0 0 on on off off in zd v out i in i in v cc t v z,in logic v cc r cc
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 8 of 23 sep 07, 2011 t esd i s out control logic sw1 0 0 0 i in i l i is v out 0 v on(cl) r is v cc switching an inductive load dynamic clamp operation at inductive load switch off the dynamic clamp circuit works only when the inductive load is switched off. when the inductive load is switched off, the voltage of out falls below 0 v. the gate voltage of sw 1 is then nearly equal to gnd because the is terminal is connected to gnd via an external resister . next, the voltage at the source of sw 1 (= gate of output mos) falls below the gnd voltage. sw1 is turned on, and the clamp diode is connected to the gate of the output mos, activating the dynamic clamp circuit. when the over-voltage is applied to v cc , the gate voltage and source voltage of sw1 are both nearly equal to gnd. sw1 is not turned on, the clamp diode is not connected to the gate of the output mos, and the dynamic clamp circuit is not activated.
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 9 of 23 sep 07, 2011 3.6.2 short circuit protection case 1: i in pin is shorted to ground in an overload condition, which includes a short circuit condition. the device shuts down automatically when either or both of following condit ions (a, b) is detected. the sense current is fixed at i is,fault . shutdown is latched until the next reset via input. (a) i l > i l(sc) (b) v on > v on(ovl) after t d(oc) case 1-(a) i l > i l(sc) 0 t short circuit detection depending on the external impedance (evaluation circuit) in out is : cable impedance t sdelay(fault) : fault sense signal delay after short circuit detection i l(sc) : short circuit detection current 0 i in i in i is i l i l i l(sc) v cc v cc v bat v in v is v out v on v out /v cc v bat 0 0 i is i is,fault t sdelay(fault) r is r l v out v on typical short circuit detection current characteristics the short circuit detection current changes according v cc voltage and v on voltage for the purpose of to be strength of the robustness under short circuit condition. i l(sc) - load current - a 0 20 40 60 80 100 120 140 160 0 5 10 15 20 v cc ? v in = 18 v 12 v 6 v v on - output voltage - v i l(sc) - load current - a 0 30 60 90 120 150 5101520 v on = 3 v 6 v 12 v v cc ? v in - v
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 10 of 23 sep 07, 2011 case 1-(b) v on > v on(ovl) after t d(oc) t v cc v out v on t d(oc) t d(oc) :turn-on check delay after input current positive slope 0 short circuit detection depending on the external impedance i in i l v out /v cc v bat 0 0 0 i is v on(ovl) i is,fault i l(sc) (evaluation circuit) in out is : cable impedance i in i is i l v cc v bat v in v is r is r l v out v on
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 11 of 23 sep 07, 2011 case 2:short circuit during on-condition the device shuts down automatically when following condit ions (a) is detected. the s ense current is fixed at i is,fault . shutdown is latched until the next reset via input. in the case of v on(nl) works such open load condition at on- state, t d(oc) is expired. (a) v on > v on(ovl) after t d(oc) case 2-(a) v on > v on(ovl) after t d(oc) depending on the external impedance v cc v out v on(ovl) t d(oc) short circuit detection t short circuit i l(sc) i is,fault i l v out v is v in 0 0 0 0 (evaluation circuit) in out is : cable impedance i in i is i l v cc v bat v in v is r is r l v out v on t d(oc) :turn-on check delay after input current positive slope i l(sc) : short circuit detection current
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 12 of 23 sep 07, 2011 over-temperature protection the output is switched off if over-temperature is detected . shutdown is latched until the next reset via input. t i in t ch t th 0 v out 0 i is 0 i is,fault
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 13 of 23 sep 07, 2011 3.6.3 power dissipation under reverse battery condition in case of reverse battery condition, internal n-ch mosfet is turned on to reduce the power dissipation by body diode. additional power is dissipated by the internal resister. follo wing is the formula for estimation of total power dissipation pd(rev) in reverse battery condition. r cc in r in r l out is r is r is0 i in(rev) i is(rev) ? v cc i l(rev) n-ch mosfet p d(rev) = r on(rev) x i l(rev) 2 + (v cc ? v f ? i in(rev) x r in ) x i in(rev) + (v cc ? i is(rev) x r is ) x i is(rev) i in(rev) = (v cc ? 2 x v f )/(r cc + r in ) i is(rev) = (v cc ? v f )/(r cc + r is0 + r is ) the reverse current through the n-ch mosfet has to be limited by the connected load. r in < (|v cc - 8 v|)/0.08 a 3.6.4 device behavior at low voltage condition if the supply voltage (v cc ? v in ) goes down under v cin(uv) , the device shuts down the output. if supply voltage (v cc ? v in ) increase over v cin(cpr) , the device turns on the output automatically. the device keeps off state if supply voltage (v cc ? v in ) does not increase over v cin(cpr) after under voltage shutdown. it is assumed that v in = 0 v when i in is activated. v out /v cc ? v in v bat 0 0 i in 0 i l v cc ? v in v out v cin(uv) v cin(cpr) t remark it is assumed that v in = 0 v when i in is activated.
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 14 of 23 sep 07, 2011 3.6.5 current sense output v cc r cc v z,is zd is r is i is r cc and r is0 are 100 (typ.). v z,is = 46 v (typ.), r is = 1 k nominal. i is i is,lim i is,offset i l v on v on(nl) r on i l k ilis = i l /i is v is < v out - 6 v, i is < i is,lim 30 mv typ. r is0 current sense ratio k ilis - current sense ration 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 0 5 10 15 20 25 30 35 150 c t ch = ? 40 c i l - load current - a
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 15 of 23 sep 07, 2011 3.6.6 measurement condition switching waveform of out terminal i in v out t on t off 10% 50% 50% ? dv/dtoff dv/dton 25% 25% switching waveform of is terminal i in i is t son(is) t sic(is) t sic(is) 3.6.7 truth table input current state output sense current l ? off i is(ll) normal operation on i l /k ilis over-temperature or short circuit off i is,fault h open load on i is,offset
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 16 of 23 sep 07, 2011 3.6.8 inductive load switch off ener gy dissipation for a single pulse maximum allowable load inductance for a single switch off i as - current sense ration - a 1 10 100 0.01 0.1 1 10 i l - load current - mh the energy dissipation for an inductive load switch-off single pulse in device (e as1 ) is estimated by the following formula as r l = 0 . e as1 = i 2 l 3.6.9 maximum allowable switch off energy (single pulse) the harness connecting the power supply, the load and the device has a small inductance and resistance. when the device turns off, the energy stored in the harness inductance is dissipated by the device, the harness resistance and the internal resistance of power supply. if the current is abnormally hi gh due to a load short, the energy stored in the harness can be large. this energy has to be taken into consideration for the safe operation. the following figure shows the condition for e as2 , the maximum switch-off energy (single pulse) for abnormally high current. in out is : cable resistance : cable inductance v cc v bat l supply r supply l short r sc r is r l r sw v bat = 18 v, r supply = 10 m , r short = r sc + r sw(on) = 50 m , l supply = 5 h, l short = 15 h, t ch,start 150 c 1 2 v on(cl) v on(cl) ? v cc
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 17 of 23 sep 07, 2011 3.7 package drawing (unit: mm) 5-pin to-252 (mp-3zk) 6.5 0.2 2.3 0.1 0.5 0.1 0.6 0.1 0 to 0.25 0.508 5.0 typ. 1.0 typ. 6.1 0.2 1.52 0.12 0.5 0.1 4.0 min . (4.4 typ.) 0.8 10.3 max. (9.8 typ.) 4.3 min. 1 6 2345 1.14 gauge plane seating plane no plating area note
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 18 of 23 sep 07, 2011 3.8 taping information this is one type (e1) of directi on of the device in the career tape. draw-out side 3.9 marking information this figure indicates the marking items and arrangement. ho wever, details of the letterform, the size and the position aren?t indicated. 66021 pb-free plating marking internal administrative code lot code *1 week code (2 digit number) year code (last 1 digit number) note: *1. composition of the lot code
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 19 of 23 sep 07, 2011 4. typical characteristics required current capability of input switch vs. ambient temperature input current for turn off vs. ambient temperature i ih - required current capability of input switch - ma 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 200 t a - ambient temperature - c i il - input current for turn-off - a 0 100 200 300 400 500 -50 0 50 100 150 200 t a - ambient temperature - c standby current vs. ambient temperature on state resistence vs. v cc ? v in voltage i cc(off) - standby current - a 0 4 8 12 16 20 -50 0 50 100 150 200 t a - ambient temperature - c r on - on-state resistance - m 0 2 4 6 8 10 12 14 0 5 10 15 20 t a = 25c v cc ? v in - v on state resistance vs. ambient temperature on state resistance at reverse battery condition vs. ambient temperature r on - on-state resistance - m 0 2 4 6 8 10 12 14 -50 0 50 100 150 200 t a - ambient temperature - c r on(rev) - on-state resistance at reverse battery condition - m 0 2 4 6 8 10 12 14 -50 0 50 100 150 200 t a - ambient temperature - c
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 20 of 23 sep 07, 2011 output clamp voltage (inductive load switch off) vs. ambient temperature turn on time vs. ambient temperature v on (cl) - output clamp voltage (inductive load switch off) - v 28 30 32 34 36 38 40 42 -50 0 50 100 150 200 t a - ambient temperature - c t on - turn on time - s 0 100 200 300 400 500 -50 0 50 100 150 200 v cc ? v in = 6 v 12 v 18 v t a - ambient temperature - c turn off time vs. ambient temperature slew rate on vs. ambient temperature t off - turn off time - s 0 100 200 300 400 500 -50 0 50 100 150 200 v cc ? v in = 6 v 12 v 18 v t a - ambient temperature - c dv/dton - slew rate on - v/ s 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 200 t a - ambient temperature - c slew rate off vs. ambient temperature ? dv/dtoff - slew rate off - v/ s 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 200 t a - ambient temperature - c
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 21 of 23 sep 07, 2011 sense current offset current vs. ambient temperature sense current under fault condition vs. ambient temperature i is,offset - sense current offset current - a 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 200 t a - ambient temperature - c i is,fault - sense current unde r fault condition - ma 0 2 4 6 8 10 12 -50 0 50 100 150 200 t a - ambient temperature - c sense current saturation current vs. ambient temperature sense current leakage current vs. ambient temperature i is,lim - sense current saturation current - ma 0 2 4 6 8 10 12 -50 0 50 100 150 200 t a - ambient temperature - c i is(ll) - sense current leakage current - a 0 0.02 0.04 0.06 0.08 0.1 -50 0 50 100 150 200 t a - ambient temperature - c under voltage shutdown vs. ambient temperature under voltage restart of charge pump vs. ambient temperature v cin(uv) - under voltage shutdown - v 0 1 2 3 4 5 6 -50 0 50 100 150 200 t a - ambient temperature - c v cin(cpr) - under voltage restart of charge pump - v 0 1 2 3 4 5 6 -50 0 50 100 150 200 t a - ambient temperature - c
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 22 of 23 sep 07, 2011 5. thermal characteristics transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 r th(ch-c) = 3.17c/w r th(ch-a) = 55c/w device on 50 mm50 mm1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 m copper area pw - pulse width - s
pd166021t1f chapter title r07ds0442ej0100 rev.1.00 page 23 of 23 sep 07, 2011 6. application example in principle notes: *1. *2. 5 v micro. output port adc port r r gnd v bat pd166021 v cc in out out *2 *1 is r is load if output current is over the maximum allowable current for inductive load at a single switch off, or if energy at a single switch off is over e as1 /e as2 , then a free wheeling diode must be connected in parallel the load. if current sense and diagnostic features are not used, is terminal has to be connected to gnd via resistor.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history pd166021t1f data sheet description rev. date page summary 1.00 sep 07, 2011 ? first edition issued
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(note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2011 renesas electronics corporation. all rights reserved. colophon 1.1

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